| Designed specifically for 750 MHz CATV applications. Features ionimplanted, arsenic emitter transistors with an all gold metallization system.
• Supply Voltage = 24 Vdc
• 6th Generation Die Technology
• Specified for 110 Channel Performance
• Broadband Power Gain @ f = 50 MHz
Gp = 18 dB Min (MHW7185A)
Gp = 19.5 dB Min (MHW7205A)
• Broadband Noise Figure @ f = 50 MHz NF = 6 dB Max
• Improvement in Distortion Over Conventional Hybrids
• Allows Higher Output Level Operation
Product Description
High dynamic range optical receiver amplifier modules in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC connector. The amplifier supply voltage pin and the photo diode bias voltage pin both connect to 5 V (DC). The modules have a mono mode optical input suitable for 1 290 nm to 1 600 nm wavelengths, a terminal to monitor the photo diode current and an electrical output having a characteristic impedance of 75Ω. Features ■ Excellent linearity ■ Low noise ■ Excellent flatness ■ Standard CATV outline ■ Rugged construction ■ Gold metallization ensures excellent reliability Applications CATV optical node systems operating in the 40 MHz to 870 MHz frequency range. InGaP pHEMT IC technology
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